dmn2114sn document number: ds30829 rev. 4 - 2 1 of 4 www.diodes.com september 2007 ? diodes incorporated dmn2114sn new product n-channel enhancement mode field effect transistor features ? low on-resistance ? ideal for notebook computer, portable phone, pcmcia cards, and battery power circuits ? lead free by design/rohs compliant (note 2) ? qualified to aec-q101 standards for high reliability ? esd protected gate ? "green" device (note 3) mechanical data ? case: sc-59 ? case material - molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? marking information: see page 3 ? ordering & date code information: see page 3 ? weight: 0.008 grams (approximate) source gate protection diode gate drain sc-59 esd protected d g s top view top view internal schematic maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 20 v gate-source voltage continuous v gss 12 v drain current continuous pulsed i d 1.2 4.0 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit total power dissipation p d 500 mw thermal resistance, junction to ambient r ja 250 c /w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 1) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current @ t j = 25c i dss ? ? 10 a v ds = 24v, v gs = 0v gate-body leakage i gss ? ? 10 a v gs = 12v, v ds = 0v on characteristics (note 1) gate threshold voltage v gs(th) 0.7 ? 1.40 v v ds = 10v, i d = 1.0ma static drain-source on-resistance r ds (on) ? ? ? ? 0.100 0.160 v gs = 4.5v, i d = 0.5a v gs = 2.5v, i d = 0.5a forward transfer admittance |y fs | ? 3.3 ? s v ds = 10v, i d = 0.5a diode forward voltage v sd ? 0.8 1.1 v v gs = 0v, i s = 1.0a dynamic characteristics input capacitance c iss ? 180 ? pf output capacitance c oss ? 120 ? pf reverse transfer capacitance c rss ? 45 ? pf v ds = 10v, v gs = 0v, f = 1.0mhz switching characteristics turn-on delay time t d(on) ? 10 ? ns turn-off delay time t d(off) ? 50 ? ns turn-on rise time t r ? 15 ? ns turn-off fall time t f ? 45 ? ns v dd = 10v, i d = 0.5a, v gs = 5.0v, r gen = 50 notes: 1. pulse width 300 s, duty cycle 2%. 2. no purposefully added lead. 3. diodes inc's "green" policy can be found on our webs ite at http://www.diodes.com /products/lead_free/index.php.
dmn2114sn fig. 1 typical output characteristics 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d t = 25c a 3v, 3.5v, 4v, 5v 3.0v 2.5v v = 1.5v gs 2.0v fig. 2 typical transfer characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 v , gate-source voltage (v) gs i, d r ai n c u r r e n t (a) d v = 10v ds t = -55c a t= 25c a t = 125c a fig. 3 on-resistance vs. gate voltage 0 0.05 0.1 0.15 0.2 0.25 0.3 02 46 8 v , gate-source voltage (v) gs new product 10 r , s t a t i c d r ai n -s o u r c e, on-resistnace ( ) ds(on) i = 0.5a d i = 1.0a d fig. 4 on-resistance vs. drain current 0.01 0.1 1 0123 i , drain current (a) d r , static drain-source, on-resistance ( ) ds(on) 4 t = 25c j 2.5v 4.5v fig. 5 on-resistance variation with temperature 0 0.05 0.1 0.15 0.2 0.25 0.3 -50 0 50 100 150 t , ambient temperature (c) a r , static drain-source, on- ds(on) resistance ( ) i = 1.0a d v = 2.5v gs v = 4.5v gs i = 0.5a d i = 0.5a, 1a d fig. 6 gate threshold voltage vs. temperature 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) v = 10v i = 1ma ds d dmn2114sn document number: ds30829 rev. 4 - 2 2 of 4 www.diodes.com september 2007 ? diodes incorporated
dmn2114sn fig. 7 reverse drain current vs. source-drain voltage 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 v , source-drain voltage (v) sd v = 4.5v gs 2.5v 0v -4.5v fig. 8 typical total capacitance 10 100 1,000 0 5 10 15 20 v , drain-source voltage (v) ds c , c a p a c i t a n c e (p f ) f = 1mhz v = 0v gs t = 25c a c rss c oss c iss new product ordering information (note 4) part number case packaging dmn2114sn-7 sc-59 3000/tape & reel notes: 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf . marking information ns2 ym ns2 = product type marking code ym = date code marking y = year ex: t = 2006 m = month ex: 9 = september date code key year 2006 2007 2008 2009 2010 2011 2012 code t u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions a m j l d e b c h k g top view n sc-59 dim min max a 0.35 0.50 b 1.50 1.70 c 2.70 3.00 d 0.95 e ? ? g 1.90 h 2.90 3.10 j 0.013 0.10 k 1.00 1.30 l 0.35 0.55 m 0.10 0.20 n 0.70 0.80 0 8 all dimensions in mm dmn2114sn document number: ds30829 rev. 4 - 2 3 of 4 www.diodes.com september 2007 ? diodes incorporated
dmn2114sn suggested pad layout x e g y c z dmn2114sn document number: ds30829 rev. 4 - 2 4 of 4 www.diodes.com september 2007 ? diodes incorporated new product dimensions value (in mm) z 4.0 g 1.2 x 0.9 y 1.4 c 2.6 e 0.95 important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated.
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